B9NK90 데이터 시트보기 (PDF) - STMicroelectronics
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B9NK90
STMicroelectronics
B9NK90 Datasheet PDF : 16 Pages
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STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise Time
td(off)
tf
Turn-off delay time
Fall time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test conditions
VDD=450 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=450 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=720 V, ID=8A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Min. Typ. Max. Unit
22
ns
13
ns
55
ns
28
ns
53
ns
11
ns
22
ns
Table 7. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-Source Breakdown
Voltage
Igs=±1mA
(Open Drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=8A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8A,
di/dt = 100A/µs,
VDD=50V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
8
A
32 A
1.6 V
950
ns
10
µC
21
A
5/16
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