GP1201FSS18 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP1201FSS18 Datasheet PDF : 9 Pages
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GP1201FSS18
2400
2200
2000
1800
Tj = 25˚C
1600
1400
1200
Tj = 125˚C
1000
800
600
400
200
0
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
3000
2500
2000
1500
1000
Tcase = 125˚C
500 Vge = ±15V
Rg(off) = 2.2Ω
0
0
400
800
1200
1600
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
2000
100
Diode
10
Transistor
1
0.1
1
10
100
1000
Pulse width, tp - (ms)
Fig. 9 Transient thermal impedance
10000
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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