UFB60FA60P(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors

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UFB60FA60P
(Rev.:2008)

Insulated Ultrafast Rectifier Module, 60 A

Vishay Semiconductors 

UFB60FA60P

Vishay High Power Products

Insulated Ultrafast

Rectifier Module, 60 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Cathode to anode breakdown voltage

VBR

Forward voltage

VFM

Reverse leakage current

IRM

Junction capacitance

CT

IR = 100 µA

IF = 30 A

IF = 60 A

IF = 30 A

IF = 60 A

TJ = 125 °C

VR = VR rated

TJ = 175 °C, VR = VR rated

VR = 600 V

MIN.

600

-

-

-

-

-

-

-

TYP.

-

1.32

1.52

1.14

1.38

0.1

0.2

50

MAX.

-

1.69

1.9

1.39

1.66

100

1.0

-

UNITS

V

µA

mA

pF

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP.

Reverse recovery time

Peak recovery current

Reverse recovery charge

trr

IRRM

Qrr

TJ = 25 °C

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

-

79

-

155

IF = 30 A

-

6

dIF/dt = 200 A/µs

VR = 200 V

-

14

-

234

-

1085

MAX.

118

209

10

20

590

2090

UNITS

ns

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Junction to case,

single leg conducting

Junction to case,

both leg conducting

RthJC

Case to heatsink

RthCS

Flat, greased surface

Weight

Mounting torque

MIN.

-

-

-

-

-

TYP.

-

-

0.05

30

1.3

MAX. UNITS

1.5

0.75

°C/W

-

-

g

-

N·m

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For technical questions, contact: ind-modules@vishay.com

Document Number: 94564

Revision: 05-May-08

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