GP1600FSM18 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP1600FSM18 Datasheet PDF : 9 Pages
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GP1600FSM18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
E
ON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
IC = 1600A
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
2.2Ω
L ~ 50nH
IF = 1600A, VR = 50% VCES,
dIF/dt = 6000A/µs
Min. Typ. Max. Units
-
1500 1650 ns
-
200 300 ns
-
500 650 mJ
-
400 550 ns
-
300 450 ns
-
450 650 mJ
-
300 400 µC
-
750
-
A
-
200
-
mJ
Test Conditions
IC = 1600A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 50nH
IF = 1600A, VR = 50% VCES,
dIF/dt = 5000A/µs
Min. Typ. Max. Units
-
1700 1900 ns
-
200 330 ns
-
650 800 mJ
-
500 700 ns
-
350 500 ns
-
600 800 mJ
-
550 650 µC
-
850
-
A
-
320
-
mJ
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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