GP201MHS18M 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP201MHS18M Datasheet PDF : 10 Pages
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GP201MHS18
1000
IC max. (single pulse)
1000
Diode
100
100
Transistor
50µs
100µs
10
10
tp = 1ms
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
10000
1
0.001
0.01
0.1
1
Pulse width, tp - (s)
10
Fig. 11 Forward bias safe operating area
Fig. 12 Transient thermal impedance
350
PWM Sine Wave
Power Factor = 0.9,
300
Modulation Index =1
250
200
150
100
50 Conditions:
Tj = 125˚C, Tcase = 75˚C
Rg = 4.7Ω, VCC = 900V
0
1
10
20
fmax - (kHz)
Fig. 13 3 Phase inverter operating frequency
350
300
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 14 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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