GP800DDM12 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP800DDM12 Datasheet PDF : 11 Pages
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GP800DDM12
180
Conditions:
160
Tcase = 25˚C,
VCE = 600V,
VGE = ±15V
A
140
B
120
C
100
80
60
40
A : Rg = 6.8Ω
20
B : Rg = 4.7Ω
C : Rg = 3.3Ω
0
0 100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig.7 Typical turn-off energy vs collector current
250
Conditions:
Tcase = 125˚C,
VCE = 600V,
200 VGE = ±15V
A
B
150
C
100
50
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
0
0 100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig.8 Typical turn-off energy vs collector current
70
Conditions:
VCE = 600V,
60
VGE = 15V,
Rg = 3.3Ω
50
Tcase = 125˚C
40
30
Tcase = 25˚C
20
10
0
0
200
400
600
800
Collector current, IC (A)
Fig.9 Typical diode reverse recovery charge vs collector current
2000
1800
1600
1400
td(off)
tf
Conditions:
Tcase = 125˚C,
VCE = 600V
VGE = 15V
Rg = 3.3Ω
1200
1000
800
td(on)
600
400
200
0
0
tr
100 200 300 400 500 600 700 800
Collector currrent, IC - (A)
Fig.10 Typical switching characteristics
6/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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