GP800DCM18 데이터 시트보기 (PDF) - Dynex Semiconductor

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GP800DCM18

Hi-Reliability Chopper Switch IGBT Module

Dynex Semiconductor 

GP800DCM18

FEATURES

s High Thermal Cycling Capability

s 800A Per Module

s Non Punch Through Silicon

s Isolated MMC Base with AlN Substrates

GP800DCM18

Hi-Reliability Chopper Switch IGBT Module

DS5363-3.0 January 2001

KEY PARAMETERS

VCES

VCE(sat)

IC

I

C(PK)

(typ)

(max)

(max)

1800V

3.5V

800A

1600A

APPLICATIONS

s High Reliability Inverters

s Motor Controllers

s Traction Drives

s Resonant Converters

The Powerline range of high power modules includes dual

and single switch configurations covering voltages from 600V to

3300V and currents up to 4800A.

The GP800DCM18 is an1800V, n channel enhancement

mode, insulated gate bipolar transistor (IGBT) chopper module.

The IGBT has a wide reverse bias safe operating area (RBSOA)

ensuring reliability in demanding applications. This device is

optimised for traction drives and other applications requiring high

thermal cycling capability or very high reliability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP800DCM18

Note: When ordering, please use the whole part number.

2(C2)

7(C1)

4(E2)

1(E1)

3(C1)

5(E1)

6(G1)

Fig. 1 Chopper switch circuit diagram

GPxxxDCxxx-xxx

Outline type code: D

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/10

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