GP800DDM18 데이터 시트보기 (PDF) - Dynex Semiconductor
부품명
상세내역
일치하는 목록
GP800DDM18 Datasheet PDF : 10 Pages
| |||
GP800DDM18
1600
1400
1200
Tj = 25˚C
1000
800
Tj = 125˚C
600
400
200
0
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig.7 Diode typical forward characteristics
2000
1800
1600
1400
1200
1000
800
600
400
Tcase = 125˚C
Vge = ±15V
200 Rg(min) = 2.2Ω
0
0
400
800
1200
1600
Collector-emitter voltage, Vce - (V)
Fig.8 Reverse bias safe operating area
2000
10000
100
1000
IC max. (single pulse)
10
100
tp = 1ms
Diode
Transistor
1
10
Conditions:
Tvj = 125˚C, Tcase = 50˚C
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig.9 Forward bias safe operating area
10000
0.1
1
10
100
1000
Pulse width, tp - (ms)
Fig.10 Transient thermal impedance
10000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Share Link: 