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TPD1030F 데이터 시트보기 (PDF) - Toshiba

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TPD1030F Datasheet PDF : 6 Pages
1 2 3 4 5 6
TPD1030F
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1030F
2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive
The TPD1030F is a 2-IN-1 low-side switch.
The IC has a vertical MOSFET output which can be directly
driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC
is equipped with intelligent self-protection functions.
Features
Two built-in power IC chips with a new structure combining a
control block and a vertical power MOSFET (L2-π-MOS) on
each chip.
Can directly drive a power load from a CMOS or TTL logic.
Weight: 0.08 g (typ.)
Built-in protection circuits against overvoltage (active clamp),
overtemperature (thermal shutdown), and overcurrent (current limiter).
Low Drain-Source ON-resistance: RDS (ON) = 0.6 Ω (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25°C)
Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C)
Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = 25°C)
8-pin SOP package with embossed-tape packing.
Pin Assignment (top view)
Marking
SOURCE1 1
IN1 2
SOURCE2 3
IN2 4
8 DRAIN1
7 DRAIN1
6 DRAIN2
5 DRAIN2
TPD1030
F
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note1: Due to its MOS structure, this product is sensitive to static electricity.
1
2006-10-31

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