TPD1011 데이터 시트보기 (PDF) - Toshiba
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TPD1011 Datasheet PDF : 11 Pages
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TPD1011S
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1011S
High−side Power Switch for Motors, Solenoids, and Lamp Drivers
TPD1011S is a monolithic power IC for high-side switches. The IC has a
vertical MOS FET output which can be directly driven from a CMOS or
TTL logic circuit (eg, an MPU). The device offers intelligent self-protection
and diagnostic functions.
Features
l A monolithic power IC with a new structure combining a control block
(Bi−CMOS) and a vertical power MOS FET (π−MOS) on a single chip.
l One side of load can be grounded to a high−side switch.
l Can directly drive a power load from a microprocessor.
l Built−in protection against thermal shutdown and load short circuiting.
Also incorporates a diagnosis function that allows diagnosis output to
be read externally at load short circuiting, opening, or
overtemperature.
l Up to −10V of counterelectromotive force from an L load can be
applied.
l Low on resistance
: RON = 60mΩ (max)
l Low operating current : IDD = 1mA (typ.) (@VDD = 12V, VIN = 0V)
l 5−pin TO−220 insulated package.
l Three standard lead configurations.
Pin Assignment
Weight
SSIP5−P−1.70A : 2.2g (typ.)
ZIP5−P−1.70 : 2.2g (typ.)
ZIP5−P−1.70A : 2.2g (typ.)
Note : That because of its MOS structure, this product is sensitive to static electricity.
1
2002-10-24
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