SIM100D06AV1 데이터 시트보기 (PDF) - SemiWell Semiconductor
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SIM100D06AV1 Datasheet PDF : 4 Pages
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Preliminary
SIM100D06AV1
Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified)
Parameters
Min Typ Max Unit
Test conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VRRM
IRM
trr
Qrr
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse leakage current
Reverse Recovery Time
Reverse Recovery Charge
ㅡ
6100
ㅡ
ㅡ
390
ㅡ
ㅡ
190
ㅡ
ㅡ
70
ㅡ
ㅡ
25
ㅡ
ㅡ
260
ㅡ
ㅡ
60
ㅡ
600
ㅡ
ㅡ
ㅡ
ㅡ
250
ㅡ
125
ㅡ
ㅡ
4.7
ㅡ
VCE = 25V , VGE = 0V
pF
f = 1 MHz
Inductive Switching (125℃)
VCC = 300V
ns
IC = 100A , VGE =±15V
RG = 3.3Ω
V
㎂
VR = 600V
ns
IF = 100A, VR = 300V
µC
di / dt = 2000A /㎲
Thermal Characteristics
Symbol
Parameter
RΘJC
Junction-to-Case (IGBT Part, Per 1/2 Module)
RΘJC
Junction-to-Case (Diode Part, Per 1/2 Module)
RΘCS
Case-to-Heat Sink (Conductive grease applied)
Min
-
-
-
Typ
-
-
0.05
Max
0.44
0.77
-
Unit
℃/W
※ Data and specifications subject to change without notice.
-2-
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