S9013 데이터 시트보기 (PDF) - Daya Electric Group Co., Ltd.
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S9013 Datasheet PDF : 2 Pages
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TO-92 Plastic-Encapsulate Transistors
S9013 TRANSISTOR (NPN)
TO-92
FEATURE
z Complementary to S9012
z Excellent hFE linearity
MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
500
625
150
-55-150
Units
V
V
V
mA
mW
℃
℃
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
Test conditions
V(BR)CBO IC= 100μA , IE=0
V(BR)CEO IC= 1mA , IB=0
V(BR)EBO IE= 100μA , IC=0
ICBO
VCB= 40V , IE=0
ICEO
VCE=20V , IE=0
IEBO
VEB= 5V, IC=0
hFE(1)
VCE=1V, IC=50mA
hFE(2)
VCE=1V, IC= 500mA
VCE(sat)
IC= 500mA, IB= 50mA
VBE(sat)
IC= 500mA, IB= 50mA
MIN TYP MAX UNIT
40
V
25
V
5
V
0.1
μA
0.1
μA
0.1
μA
64
400
40
0.6
V
1.2
V
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
D
E
Range
64-91
78-112
fT
VCE=6V,IC=20mA,f=30MHz
150
F
96-135
G
112-166
H
144-202
I
190-300
MHz
J
300-400
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