RFM18N08 데이터 시트보기 (PDF) - Intersil
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RFM18N08 Datasheet PDF : 5 Pages
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Semiconductor
September 1998
RFM18N08, RFM18N10,
RFP18N08, RFP18N10
18A, 80V and 100V, 0.100 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM18
N08,
RFM18
N10,
RFP18N
08,
RFP18N
10)
/Subject
(18A,
80V and
100V,
0.1 Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• 18A, 80V and 100V
• rDS(ON) = 0.100Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM18N08
TO-204AA
RFM18N08
RFM18N10
TO-204AA
RFM18N10
RFP18N08
TO-220AB
RFP18N08
RFP18N10
TO-220AB
RFP18N10
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17421.
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1446.1
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