TGA1135B-SCC(2002) 데이터 시트보기 (PDF) - TriQuint Semiconductor
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TGA1135B-SCC Datasheet PDF : 10 Pages
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Product Datasheet
January 21, 2002
18-27 GHz 1W Power Amplifier
TGA1135B-SCC
Key Features
• 0.25 um pHEMT Technology
• 14 dB Nominal Gain at 23GHz
• 29 dBm Nominal P1dB
• 37dBm OTOI typical
• Typical 15dB Input/Output RL
• Bias 6 - 7V @ 480 mA
• On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
Product Description
The TriQuint TGA1135B-SCC is a balanced two-
stage HPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process. The
TGA11135B is designed to support a variety of
millimeter wave applications including point-to-
point digital radio and LMDS/LMCS.
The balanced configuration two stage design
consists of a pair of 600um input devices driving a
4 x 600um output stage. Power combining is
achieved with on-chip Lange couplers.
The TGA1135B-SCC provides 29 dBm nominal
output power at 1dB compression across
18 - 27GHz. Typical small signal gain is 14 dB
across the band. Input and output return loss is
typically -15dB.
An on-chip power detector and reference diode
may be used for power monitoring/control and
bias control loops.
The TGA1135B-SCC requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Ka Band Sat-Com
TGA1135B Fixtured Amplifier Typical Small Signal Data
Wafer 993150303, 6V/540mA
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
32
31.5
31
VD = 7V
30.5
30
29.5
VD = 6V
29
28.5
28
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
27.5
27
16 17 18 19 20 21 22 23 24 25 26 27 28 29
Frequency (GHz)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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