NE56787 데이터 시트보기 (PDF) - Advanced Semiconductor
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NE56787 Datasheet PDF : 1 Pages
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NE56787
NPN SILICON HI FREQUNCY TRANSISTOR
DESCRIPTION:
The ASI NE56787 is Designed for
general purpose and ultra linear small
signal amplifier applications up to 4.0
GHz.
FEATURES INCLUDE:
• Ideal for linear Class-A amplifiers
MAXIMUM RATINGS:
IC
60 mA
VCBO
25 V
VCEO
12 V
VEBO
2.0 V
PDISS
600 mW @ TA ≤ 75 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
40 °C/W
PACKAGE STYLE .100 2L
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
ICBO
VCB = 10 V
IEBO
VEB = 1.0 V
hFE
VCE = 10 V
IC = 30 mA
COB
VCB = 10 V
fs
S21 2 = 0 dB
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
1.0
1.0
30
100
200
UNITS
µA
µA
---
0.44
0.80
pF
7.5
8.0
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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