MBRF2545CT 데이터 시트보기 (PDF) - Tiger Electronic
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MBRF2545CT Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF2545CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss, High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
TO-220F
1.ANODE
2.CATHODE
3.ANODE
1
2
2
3
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
VRRM
VRWM
VR
VR(RMS)
Value
45
32
Average Rectified Output Current (Note 1)
Tc=130℃
Peak Repetitive Reverse Surge Current (Note 3)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load
(JEDEC Method)
Forward Voltage Drop @ IF=30A, TC=125℃
@ IF=30A, TC= 25℃
Peak Reverse Current
@ TC= 25℃
at Rated DC Blocking Voltage
@ TC=125℃
Typical Junction Capacitance (Note 2)
IO
IRRM
IFSM
VFM
IRM
CT
30
1.0
150
0.73
0.82
0.2
40
750
Typical Thermal Resistance Junction to Case (Note 1)
RθJC
1.5
Operating and Storage Temperature Range
Tj,TSTG
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3．2.0μs pulse width, f = 1.0KHz.
-55~+125
Unit
V
V
A
A
A
V
mA
pF
℃/W
℃
A,Jun,2011
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