IRF320 데이터 시트보기 (PDF) - Harris Semiconductor
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IRF320 Datasheet PDF : 7 Pages
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IRF320, IRF321, IRF322, IRF323
Typical Performance Curves Unless Otherwise Specified (Continued)
5
80µs PULSE TEST
4
3
10V
6.0V
5.5V
10
VDS ≥ 50V
80µs PULSE TEST
DUTY CYCLE ≤ 2%
1
150oC
25oC
2
0.1
VGS = 5.0V
1
4.5V
0
0
3
6
4.0V
0.01
9
12
15
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
10.0
3.0
ID = 3.3A
VGS = 10V
8.0
2.4
6.0
1.8
4.0
VGS = 10V
1.2
VGS = 20V
2.0
0.6
0
0
3
6
9
12
15
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
600
400
CISS
200
0
1
COSS
CRSS
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
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