FDMS7650 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDMS7650 Datasheet PDF : 7 Pages
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Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 36 A
8
6
4
2
VDD = 10 V
VDD = 15 V
VDD = 20 V
0
0
40
80
120
160
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
20000
10000
Ciss
Coss
1000
f = 1 MHz
VGS = 0 V
100
0.1
1
Crss
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
100
TJ = 25 oC
10
TJ = 125 oC
1
10-3
10-2
10-1
1
10
102
103
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
300
VGS = 10 V
200
VGS = 4.5 V
100
Limited by Package
RθJC = 1.2 oC/W
0
25
50
75
100
125
150
Tc, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
100
10
THIS AREA IS
1 LIMITED BY rDS(on)
SINGLE PULSE
0.1
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01
0.1
1
1 ms
10 ms
100 ms
1s
10 s
DC
10
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1000
100
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
10
1
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
4
FDMS7650 Rev.D3
www.fairchildsemi.com
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