AOB12N50 데이터 시트보기 (PDF) - Unspecified

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AOB12N50

500V, 12A N-Channel MOSFET

Unspecified 

AOT12N50/AOB12N50/AOTF12N50

500V, 12A N-Channel MOSFET

General Description

The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET

process that is designed to deliver high levels of performance and robustness in popular AC-DC

applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply designs.

Features

VDS

ID (at VGS=10V)

RDS(ON) (at VGS=10V)

600V@150℃

12A

< 0.52Ω

D

G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol AOT12N50/AOB12N50 AOTF12N50

Drain-Source Voltage

VDS

500

Gate-Source Voltage

VGS

±30

Continuous Drain

TC=25°C

Current

TC=100°C

Pulsed Drain Current C

Avalanche Current C

Repetitive avalanche energy C

Single plused avalanche energy G

Peak diode recovery dv/dt

ID

IDM

IAR

EAR

EAS

dv/dt

12

12*

8.4

8.4*

48

5.5

454

908

5

TC=25°C

Power Dissipation B Derate above 25oC

PD

250

2

50

0.4

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

TJ, TSTG

TL

-55 to 150

300

Parameter

Maximum Junction-to-Ambient A,D

Maximum Case-to-sink A

Symbol

RθJA

RθCS

AOT12N50/AOB12N50

65

0.5

AOTF12N50

65

--

Maximum Junction-to-Case

RθJC

0.5

2.5

* Drain current limited by maximum junction temperature.

S

Units

V

V

A

A

mJ

mJ

V/ns

W

W/ oC

°C

°C

Units

°C/W

°C/W

°C/W

1/6

www.freescale.net.cn

Free Datasheet http://www.datasheet4u.com/

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