ABS4(2013) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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ABS4
(Rev.:2013)

Surface Mount Si-Bridge-Rectifiers with 4mm Pitch

Diotec Semiconductor Germany  

Characteristics

Max. average forward rectified current

Dauergrenzstrom

Forward voltage – Durchlass-Spannung

TA = 40°C

Tj = 25°C

Leakage current – Sperrstrom

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Thermal resistance junction to terminal

Wärmewiderstand Sperrschicht – Anschluss

Tj = 25°C

IF = 0.4 A

IF = 0.8 A

VR = VRRM

ABS2 ... ABS10

Kennwerte

IFAV

0.8 A 1)

IFAV

1 A 2)

VF

< 0.95 V 3)

VF

< 1.1 V 3)

IR

< 5 µA

RthA

< 80 K/W 1)

RthA

< 62 K/W 2)

RthT

< 25 K/W

120

[%]

100

80

60

40

20

IFAV

0

0 TA 50

100

150 [°C]

Rated forward current versus ambient temperature

Zul. Richtstrom in Abh. von der Umgebungstemp.

10 2

[A]

10

Tj = 25°C

1

10 -1

IF

10 -2

0 .4

30a-(0.4a-0.95v)

V F 0.8 1.0 1.2 1.4 [V] 1.8

Forward characteristics (typical values)

Durchlasskennlinien (typische Werte)

1 Mounted on P.C. Board with 25 mm2 copper pads at each terminal

Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2 Mounted on Alumina Substrate 2500mm² with 1 mm2 copper pads at each terminal

Montage auf Aluminium-Substrat 2500mm² mit 1 mm2 Kupferbelag (Lötpad) an jedem Anschluss

3 Valid per diode – Gültig pro Diode

2

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