J610 데이터 시트보기 (PDF) - Toshiba
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J610 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
5
Common source
VGS = −10 V
Pulse test
4
−2 A
3
ID = −1 A
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – VDS
1000
Ciss
Coss
100
Crss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
−0.1 −0.3
−1
−3
−10
−30
Drain-source voltage VDS (V)
−100
2SJ610
−100
Common source
Tc = 25°C
Pulse test
IDR – VDS
−10
−1
VGS = −10 V
−5 V −3 V
0, 1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Drain-source voltage VDS (V)
Vth – Tc
−5
Common source
VDS = −10 V
ID = −1 mA
Pulse test
−4
−3
−2
−1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
−300
−30
Common source
ID = −2 A
−25
Tc = 25°C
−200 VDS
Pulse test
−20
−100
0
0
−15
−50
VGS
−10
VDD = −200 V
−100
−5
−0
5
15
25
35
Total gate charge Qg (nC)
4
2010-02-05
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