C5810(2002) 데이터 시트보기 (PDF) - Toshiba
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| C5810 Datasheet PDF : 0 Pages | |||
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SC5810
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.1 A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)
• High-speed switching: tf = 85 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
100
V
VCEX
80
V
VCEO
50
VEBO
7
V
IC
1.0
A
ICP
2.0
IB
0.1
A
2.0
PC (Note)
W
1.0
Tj
150
°C
Tstg
−55 to 150
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 100 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 0.3 A
IC = 300 mA, IB = 6 mA
IC = 300 mA, IB = 6 mA
VCB = 10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC ≈ 30 V, RL = 100 Ω
IB1 = −IB2 = 10 mA
Min Typ. Max Unit
―
―
100
nA
―
―
100
nA
50
―
―
V
400
― 1000
200
―
―
―
―
0.17
V
―
―
1.10
V
―
5
―
pF
―
35
―
680
―
ns
―
85
―
1
2002-08-13
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