GLT5160L16 데이터 시트보기 (PDF) - G-Link Technology
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GLT5160L16 Datasheet PDF : 45 Pages
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FUNCTIONAL DESCRIPTION
The GLT5160L16 provides basic functions, bank (row) activate,
burst read / write, bank (row) precharge, and auto / self refresh.
Each command is defined by control signals of RAS, CAS and WE
at CLK rising edge. In addition to 3 signals, CS, CKE and A[10] are
used as chip select, refresh option, and precharge option,
respectively.
To know the detailed definition of commands, please see the com-
mand truth table.
CLK
CS
RAS
CAS
WE
CKE
A[10]
Chip Select: L=select, h=deselect
Com-
Com-
Define Basic Com-
Com-
Refresh option @refresh command
Precharge Option @ precharge or read/write
command
Read (READ) [RAS = H, CAS = L, WE = H]
READ command starts burst read from the active bank indicated by
BA. First output data appears after CAS latency. When A[10] = H at
this command, the bank is deactivated after the burst read (auto-pre-
charge, READA).
Write (WRITE) [RAS = H, CAS =WE = L]
WRITE command starts burst write to the active bank indicated by
BA. Total data length to be written is set by burst length. When
A[10] = H at this command, the bank is deactivated after the burst
write (auto-precharge, WRITEA).
Precharge (PRE)
[RAS = L, CAS = H, WE = L]
PRE command deactivates the active bank indicated by BA. This
command also terminates burst read / write operation. When A[10]
= H at this command, both banks are deactivated (precharge all,
PREA).
Activate (ACT) [RAS = L, CAS = WE = H]
ACT command activates a row in an idle bank indicated by BA.
Command Truth Table [1]
Auto-Refresh (REFA)
[RAS = CAS = L, WE = CKE = H]
REFA command starts auto-refresh cycle. Refresh address includ-
ing bank address are generated internally. After this command, the
banks are precharged automatically. Any other command should
not be asserted until tRC is met.
Command
Deselect
No Operation
Row Address Entry & Bank Activate
Single Bank Precharge
Precharge All Banks
Column Address Entry & Write
Column Address Entry & Write with Auto-Precharge
Column Address Entry & Read
Column Address Entry & Read with Auto-Precharge
Auto-Refresh
Self-Refresh Entry
Self-Refresh Exit
Burst Terminate
Mode Register Set
CKE n-
A[10 A[9:
Mnemonic
1
CKE n CS RAS CAS WE BA ]
0]
DESEL
H
X
HX
X
X
X
XX
NOP
H
X
L
H
H
H
XX
X
ACT
H
X
L
L
H
H
VV
V
PRE
H
X
L
L
H
L
V
L
X
PREA
H
X
L
L
H
L
V
HX
WRITE
H
X
L
H
L
L
V
L
V
WRITEA
H
X
L
H
L
L
VH
V
READ
H
X
L
H
L
H
V
L
V
READA
H
X
L
H
L
H
V
H
V
REFA
H
H
L
L
L
H
X
XX
REFS
H
L
L
L
L
H
X
X
X
REFSX
L
H
H
X
X
X
X
X
X
L
H
L
H
H
H
X
XX
TBST
H
X
L
H
H
L
X
XX
MRS
H
X
L
L
L
L
X
L
V
1. H = High Level, L = Low Level, V = Valid, X = Don't Care, n = CLK cycle number
G-LINK Technology
3
DEC. 2003 (Rev.2.4)
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