AOB12N65L 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AOB12N65L Datasheet PDF : 6 Pages
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AOT12N65/AOTF12N65/AOB12N65
650V, 12A N-Channel MOSFET
General Description
The AOT12N65 & AOTF12N65 & AOB12N65 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
750V@150℃
12A
< 0.72Ω
Top View
TO-220
TO-220F
TO-263
D2PAK
D
D
AOT12N65
S
D
G
Orderable Part Number
AOT12N65
AOTF12N65
AOTF12N65L
AOB12N65L
AOTF12N65
GD S
Package Type
TO-220 Pb Free
TO-220F Pb Free
TO-220F Green
TO-263 Green
S
G
G
S
AOB12N65
Form
Tube
Tube
Tube
Tape & Reel
Minimum Order Quantity
1000
1000
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT(B)12N65
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
12
7.7
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
278
2.2
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT(B)12N65
65
0.5
Maximum Junction-to-Case
RθJC
0.45
* Drain current limited by maximum junction temperature.
AOTF12N65
650
±30
12*
7.7*
48
5
375
750
30
5
50
0.4
-55 to 150
300
AOTF12N65
65
--
2.5
AOTF12N65L
12*
7.7*
40
0.3
AOTF12N65L
65
--
3.1
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.7.0: December 2014
www.aosmd.com
Page 1 of 6
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