2N3906 데이터 시트보기 (PDF) - NTE Electronics
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2N3906 Datasheet PDF : 3 Pages
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2N3905 & 2N3906
Silicon PNP Transistor
General Purpose
TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/5C
Total Device Dissipation (TA = +605C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
IC = 1mA, IB = 0, Note 1
IC = 105 A, IE = 0
IE = 105 A, IC = 0
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note 1)
ICEX
IBL
VCE = 30V, VEB = 3V
VCE = 30V, VEB = 3V
DC Current Gain
2N3905
hFE
VCE = 1V, IC = 0.1mA
2N3906
2N3905
2N3906
VCE = 1V, IC = 1mA
2N3905
2N3906
VCE = 1V, IC = 10mA
2N3905
2N3906
VCE = 1V, IC = 50mA
2N3905
VCE = 1V, IC = 100mA
2N3906
Min Typ Max Unit
40 − −
V
40 − −
V
5−−
V
− − 50 nA
− − 50 nA
30 − −
60 − −
40 − −
80 − −
50 − 150
100 − 300
30 − −
60 − −
15 − −
30 − −
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
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