GPDR2438(V2) 데이터 시트보기 (PDF) - Green Power Semiconductors
부품명
상세내역
일치하는 목록
GPDR2438 Datasheet PDF : 1 Pages
| |||
Green Power
Semiconductors
N
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
Phone: +39-010-667 8800
Fax: +39-010-667 8812
Web: www.gpsemi.it
E-mail: info@gpsemi.it
GSD32015
RECTIFIER DIODE
M
ØL
H
Cathode on base (Standard) - Anode on base (Reverse)
Symbol A B C D E F G H L
M
VOLTAGE UP TO
AVERAGE CURRENT
SURGE CURRENT
N
Inches 4.07 1.426 .64 .745 .233 .437 1.06 1.166 .85
3/8-24 UNF 1/4-28 UNF
mm 10.33 36.22 16.25 18.92 5.66 11.09 26.92 29.61 21.59
BLOCKING CHARACTERISTICS
Characteristic
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
IRRM
Repetitive peak reverse current, max.
Conditions
VRRM, single phase, half wave, Tj = Tjmax
FORWARD CHARACTERISTICS
IF(AV)
Average forward current
IF(RMS)
R.M.S. forward current
IFSM
Surge forward current
I²t
I² t for fusing coordination
VF(TO)
rF
Threshold voltage
Forward slope resistance
VFM
Peak forward voltage, max
Sine wave,180° conduction, Tc = 120°C
Sine wave,180° conduction, Tc = 120°C
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
Tj = Tjmax
Tj = Tjmax
Forward current IF =
300 A, Tj = Tjmax
SWITCHING CHARACTERISTICS
Qrr
Rverse recovery charge
Irr
Reverse recovery current
trr
Reverse recovery time
VFP
Forward recovery voltage
Tj = Tjmax, IF = A, tp = µs, di/dt = A/µs
VR = V, dV/dt = V/µs
Tj = Tjmax, di/dt = A/µs
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Thermal resistance (junction to case)
Double side cooled
Rth(c-h)
Thermal resistance (case to heatsink)
Double side cooled
Tjmax
Max operating junction temperature
Tstg
Storage temperature
M
Mounting torque
Mass
Document GSD32015T001
1600 V
150 A
2.85 kA
Value
1600 V
1700 V
10 mA
150 A
236 A
2.85 kA
34.0 kA²s
0.9 V
0.65 mΩ
1.10 V
µC
A
µs
V
0.35 °C/W
0.08 °C/W
180 °C
-65 / 180 °C
10 N·m
100 g
Share Link: 