U631H256 데이터 시트보기 (PDF) - Simtek Corporation
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U631H256 Datasheet PDF : 13 Pages
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U631H256
RECALL; SRAM operation cannot commence until
tRESTORE after VCC exceeds VSWITCH.
If the U631H256 is in a WRITE state at the end of
power up RECALL, the SRAM data will be corrupted.
To help avoid this situation, a 10 kΩ resistor should be
connected between W and VCC.
Hardware Protection
The U631H256 offers hardware protection against
inadvertent STORE operation through VCC sense.
For VCC < VSWITCH the software initiated STORE ope-
ration will be inhibited.
Low Average Active Power
The U631H256 has been designed to draw significantly
less power when E is LOW (chip enabled) but the
access cycle time is longer than 55 ns.
When E is HIGH the chip consumes only standby cur-
rent.
The overall average current drawn by the part depends
on the following items:
1. CMOS or TTL input levels
2. the time during which the chip is disabled (E HIGH)
3. the cycle time for accesses (E LOW)
4. the ratio of READs to WRITEs
5. the operating temperature
6. the VCC level
The information describes the type of component and shall not be considered as assured characteristics. Terms of
delivery and rights to change design reserved.
August 15, 2006
STK Control #ML0043
11
Rev 1.1
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