K12A55D 데이터 시트보기 (PDF) - Toshiba
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K12A55D Datasheet PDF : 6 Pages
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RDS (ON) − Tc
2.0
Common source
VGS = 10 V
Pulse Test
1.6
1.2
ID = 12 A
6
0.8
3
0.4
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
TK12A55D
100
Common source
Tc = 25°C
Pulse Test
IDR − VDS
10
1
10
5
3
1
VGS = 0, −1 V
0.1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Drain-source voltage VDS (V)
10000
1000
100
Capacitance – VDS
Ciss
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
Drain-source voltage VDS (V)
Vth − Tc
5
Common source
VDS = 10 V
ID = 1mA
4
Pulse Test
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD − Tc
80
60
40
20
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input / output
characteristics
500
20
VDS
400
16
300
200
100
0
0
12
VDD = 100 V
400
200
VGS
8
Common source
ID = 12 A
Tc = 25°C
Pulse Test
4
0
10
20
30
40
50
Total gate charge Qg (nC)
4
2011-04-26
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