TK12A45D 데이터 시트보기 (PDF) - Toshiba
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TK12A45D Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
TK12A45D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 6 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
⎯
±1
μA
⎯
⎯
10
μA
450 ⎯
⎯
V
2.0
⎯
4.0
V
⎯ 0.43 0.52 Ω
1.4 5.5
⎯
S
⎯ 1200 ⎯
⎯
6
⎯
pF
⎯ 120 ⎯
tr
10 V
VGS
ID = 6 A VOUT
⎯
25
⎯
0V
ton
50 Ω
RL = 33 Ω ⎯
60
⎯
ns
tf
VDD ≈ 200 V
toff
Duty ≤ 1%, tw = 10 μs
⎯
12
⎯
⎯
100
⎯
Qg
Qgs
VDD ≈ 360 V, VGS = 10 V, ID = 12 A
Qgd
⎯
24
⎯
⎯
16
⎯
nC
⎯
8
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
12
A
⎯
⎯
48
A
⎯
⎯
−1.7
V
⎯ 1300 ⎯
ns
⎯
6
⎯
μC
Marking
K12A45D
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2013-11-01
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