Electrical Characteristics (Ta = 25°C)
TK15J60U
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7.5 A
VDS = 10 V, ID = 7.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
⎯
±1
μA
⎯
⎯
100
μA
600 ⎯
⎯
V
3.0
⎯
5.0
V
⎯ 0.24 0.3
Ω
2.1 8.5
―
S
― 950 ―
―
47
―
pF
― 2300 ―
tr
10 V
ID = 7.5 A VOUT
⎯
37
⎯
VGS
0V
ton
50 Ω
⎯
80
⎯
RL = 40 Ω
ns
tf
⎯
8
⎯
VDD ≈ 300 V
toff
Duty ≤ 1%, tw = 10 μs
⎯
105 ⎯
Qg
⎯
17
⎯
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 15 A
⎯
10
⎯
nC
Qgd
⎯
7
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
15
A
⎯
⎯
30
A
⎯
⎯
−1.7
V
⎯
530
⎯
ns
⎯
9.0
⎯
μC
Marking
TOSHIBA
K15J60U
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2013-11-01