T15V256A 데이터 시트보기 (PDF) - Taiwan Memory Technology
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T15V256A Datasheet PDF : 11 Pages
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T15V256A
AC CHARACTERISTICS
(Vcc=2.7V to 3.6V, Vss = 0V, Ta = 0 ~ +70 °C /-40 to 85°C)
(1) READ CYCLE
PARAMETER
Read Cycle Time
SYM. -50ns
-70ns
-85ns
-100ns UNIT
MIN MAX MIN. MAX. MIN. MAX. MIN. MAX.
tRC
50 - 70 - 85 - 100 - ns
Address Access Time
tA A
- 50 - 70 - 85 - 100 ns
Chip Select Access Time
tACS - 50 - 70 - 85 - 100 ns
Output Enable to Output Valid
tAOE - 25 - 35 - 40 - 50 ns
Chip Selection to Output in Low Z tCLZ* 7 - 10 - 10 - 10 - ns
Output Enable to Output in Low Z tOLZ* 5 - 5 - 5 - 5 - ns
Chip Deselection to Output in High Z tCHZ* - 20 - 25 - 30 - 30 ns
Output Disable to Output in High Z tOHZ* - 20 - 25 - 30 - 30 ns
Output Hold from Address Change tOH 10 - 10 - 10 - 10 - ns
* These parameters are measured with 5pF test load.
(2)WRITE CYCLE
PARAMETER
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Active from End of Write
SYM.
tW C
-50ns
MIN MAX
50 -
-70ns
-85ns
-100ns UNI
MIN. MAX. MIN. MAX. MIN. MAX. T
70 - 85 - 100 - ns
tCW 40 - 60 - 70 - 80 - ns
tA W 40 - 60 - 70 - 80 - ns
tA S
0 - 0 - 0 - 0 - ns
tW P
30 - 50 - 60 - 70 - ns
tW R
0 - 0 - 0 - 0 - ns
tDW 25 - 30 - 35 - 40 - ns
tDH
0 - 0 - 0 - 0 - ns
tWHZ* - 20 - 25 - 30 - 30 ns
tOW
5 - 5 - 5 - 5 - ns
* These parameters are measured with 5pF test load.
Taiwan Memory Technology, Inc. reserves the right P. 5
to change products or specifications without notice.
Publication Date: SEP. 2001
Revision:A
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