STTH506TTI 데이터 시트보기 (PDF) - STMicroelectronics
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STTH506TTI Datasheet PDF : 5 Pages
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STTH506TTI
THERMAL AND POWER DATA
Symbol
Rth (j-c)
P
Parameter
Junction to case thermal resistance
Conduction power dissipation for
both diodes
Test conditions
Total
IF(AV) = 5 A δ = 0.5
Tc = 100°C
Value
3.0
17
Unit
°C/W
W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
Parameter
Tests Conditions
IR *
Reverse leakage current VR = VRRM
Tj = 25°C
Tj = 125°C
VF ** Forward voltage drop
IF = 5 A
Tj = 25°C
Tj = 125°C
Min. Typ. Max. Unit
6
µA
8
60
3.6
V
2.1 2.6
Pulse test : * tp = 100 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 1.8 x IF(AV) + 0.16 IF2(RMS)
DYNAMIC CHARACTERISTICS (for both diodes)
Symbol Parameter
Tests Conditions
Min. Typ. Max. Unit
trr Reverse recovery IF = 0.5 A Irr = 0.25 A Tj = 25°C
12
ns
time
IR = 1 A
IF = 1 A dIF/dt = - 50 A/µs
25
VR = 30 V
IRM Reverse recovery VR = 400 V IF = 5 A
current
dIF/dt = -200 A/µs
S Reverse recovery
softness factor
Tj = 125°C
3.8 4.5 A
0.4
-
TURN-ON SWITCHING CHARACTERISTICS (for both diodes)
Symbol Parameter
tfr Forward recovery
time
VFP Transient peak
forward recovery
voltage
Tests Conditions
IF = 5 A dIF/dt = 100 A/µs Tj = 25°C
VFR = 1.1 x VF max
IF = 5 A dIF/dt = 100 A/µs Tj = 25°C
Min. Typ. Max. Unit
100 ns
7
V
2/5
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