STH8NA80 데이터 시트보기 (PDF) - STMicroelectronics
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STH8NA80 Datasheet PDF : 6 Pages
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STW8NA80 STH8NA80FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
P ar am et e r
Turn-on Time
Rise Time
Turn-on Current Slope
Test Conditions
VDD = 400 V
RG = 4.7 Ω
VDD = 640 V
RG = 47 Ω
ID = 4 A
VGS = 10 V
ID = 8 A
VGS = 10 V
Min.
Typ.
20
28
170
Max.
28
38
Unit
ns
ns
A/µs
Qg
Total Gate Charge
Q gs Gat e-Source Charge VDD = 400 V ID = 8 A VGS = 10 V
Qgd Gat e-Drain Charge
75
100
nC
10
nC
35
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V
RG = 4.7 Ω
ID = 8 A
VGS = 10 V
Min.
Typ.
18
20
25
Max.
25
28
35
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 7.2 A
trr
Qrr
I R RM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 7.5 A
VDD = 100 V
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
VGS = 0
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
850
17
40
Max.
7.2
28.8
1.6
Unit
A
A
V
ns
µC
A
3/6
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