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STF12A60

Bi-Directional Triode Thyristor

Unspecified 

Features

■ Repetitive Peak off-State Voltage:600

■R.M.S On-State Current(IT(RMS)=12A

■ Isolation Voltage ( VISO = 1500V AC )

■ High Commutation dV/dt.

STF12A60

Bi-Directional Triode Thyristor

General Description

General purpose switching and phase control applications.

These devices are intended to be interfaced directly to micro-

controllers, logic integrated circuits and other low power gate

trigger circuits such as fan speed and temperature modulation

control, lighting control and static switching relay.

By using an internal ceramic pad, the TO220F series provides

voltage insulated tab (rated at 2500V RMS) complying with UL

standards (file ref.:E347423)

A1

A2

G

TO220F

Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)

Symbol

VDRM

IT(RMS)

ITSM

I2t

PGM

PG(AV)

IFGM

VRGM

TJ,

Tstg

Parameter

Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)

Forward Current RMS (All Conduction Angles, Tc=58℃)

Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz)

Circuit Fusing Considerations (t p= 10 ms)

Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)

Average Gate Power — Forward, (Over any 20ms period)

Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)

Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)

Junction Temperature

Storage Temperature

Value

600

12

119/130

71

5

0.5

2

10

-40~125

-40~150

Units

V

A

A

A2s

W

W

A

V

℃

℃

Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC

may switch to the on-state. The rate of rise of current should not exceed 3A/us.

Thermal Characteristics

Symbol

Parameter

RQJC

RQJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Value

Min Typ Max

-

-

3.3

-

-

120

Units

℃/W

℃/W

Rev. B Nov.2008

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

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