SPD30N03L 데이터 시트보기 (PDF) - Siemens AG
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SPD30N03L Datasheet PDF : 9 Pages
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Drain-source on-resistance
RDS(on) = f (Tj)
parameter : ID = 30 A, VGS = 4.5 V
SPD30N03L
0.050
Ω
0.040
0.035
0.030
0.025
0.020
0.015
98%
typ
0.010
0.005
0.000-60 -20
20
60 100 140 °C 200
Tj
Typ. capacitances
C = f (VDS)
parameter: VGS = 0 V, f = 1 MHz
10 4
SPD30N03L
Gate threshold voltage
VGS(th) = f (Tj)
parameter : VGS = VDS, ID = 80 µA
3.0
V
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
max
0.8
0.6
typ
0.4
0.2
min
0.0
-60 -20
20
60 100 140 °C 200
Tj
Forward characteristics of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 SPD30N03L
pF
Ciss
10 3
Coss
Crss
10 2
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
A
10 2
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
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