SF25GZ51 데이터 시트보기 (PDF) - Toshiba
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SF25GZ51 Datasheet PDF : 6 Pages
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SF25GZ51, SF25JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF25GZ51, SF25JZ51
MEDIUM POWER CONTROL APPLICATIONS
Repetitive Peak Off−State Voltage: VDRM = 400V, 600 V
Repetitive Peak Reverse Voltage: VRRM = 400V, 600 V
Average On−State Current: IT (AV) = 25 A
Isolation Voltage: VIsol = 1500 V AC
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
Off−State Voltage and
Repetitive Peak Reverse
Voltage
SF25GZ51
SF25JZ51
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive < 5 ms,
Tj = 0~125°C)
SF25GZ51
SF25JZ51
Average On−State Current
(Half Sine Waveform)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
VIsol
Note : di / dt Test Condition
iG = 30mA, tgw = 10µs, tgr ≤ 250ns
RATING
400
600
500
720
25
39
350 (50 Hz)
385 (60 Hz)
612
100
5
0.5
10
−5
2
−40~125
−40~125
1500
UNIT
V
V
A
A
A
A2s
A / µs
W
W
V
V
A
°C
°C
V
JEDEC
―
JEITA
―
TOSHIBA
13-16A1B
Weight: 5.9 g (typ.)
1
2004-07-06
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