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S2800D Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
Order this document
by S2800/D
S2800
Series
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
G
A
K
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 100°C, Gate Open)
F
A
B
S2800 D
M
N
Symbol
VRRM
VDRM
Value
50
100
200
400
600
800
Unit
Volts
Peak Non-repetitive Reverse Voltage and
Non-Repetitive Off-State Voltage(1)
F
A
B
S2800 D
M
N
VRSM
VDSM
75
125
250
500
700
900
Volts
RMS Forward Current
(All Conduction Angles)
TC = 75°C
IT(RMS)
10
Amps
Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C)
Circuit Fusing Considerations (t = 8.3 ms)
p Forward Peak Gate Power (t 10 µs)
ITSM
100
Amps
I2t
40
A2s
PGM
16
Watts
Forward Average Gate Power
PG(AV)
0.5
Watt
Operating Junction Temperature Range
TJ
–40 to +100
°C
Storage Temperature Range
Tstg
–40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
1
© Motorola, Inc. 1995
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