RT3K33M 데이터 시트보기 (PDF) - Isahaya Electronics

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RT3K33M

Composite Transistor For high speed switching Silicon N-channel MOSFET

Isahaya Electronics 

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Symbol

Parameter

Test conditions

V(BR)DSS

IGSS

IDSS

Vth

| Yfs |

RDS(ON)

Ciss

Coss

tON

tOFF

Drain-source breakdown voltage

Gate-source leak current

Zero gate voltage drain current

Gate threshold voltage

Forward transfer admittance

Static drain-source on-state resistance

Input capacitance

Output capacitance

Switching time

I D=100μA, V GS=0V

V GS=±5V, VDS=0V

V DS=20V ,VGS=0V

I D=250μA, V DS= V GS

V DS=10V, I D=0.1A

I D=100mA, V GS=4.0V

V DS=10V, V GS=0V,f=1MHz

V DS=10V, V GS=0V,f=1MHz

V DD =5V , I D = 10mA

V GS=0～5V

RT3K33M

Composite Transistor

For high speed switching

Silicon N-channel MOSFET

Limits

Unit

Min

Typ

Max

20

-

-

V

-

- ±0.5 μA

-

-

50 μA

0.6

-

1.2 V

-

300

- mS

-

0.9

-

Ω

-

34

-

pF

-

8.5

-

pF

-

14

-

ns

-

85

-

Switching time test condition

test circuit

5V

IN

0

50Ω

10μs

VDD=5V

D.U.≦1%

Common source

Ta=25℃

OUT

5V

input

RL waveform

VDD

0V

VDD

output

waveform

VDS(ON）

10%

90%

10%

90%

tr

ton

tf

toff

ISAHAYA ELECTRONICS CORPORATION

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