RB521S30,315 데이터 시트보기 (PDF) - NXP Semiconductors.
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RB521S30,315 Datasheet PDF : 12 Pages
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NXP Semiconductors
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
35
Cd
(pF)
30
25
20
15
10
5
0
0
10
f = 1 MHz; Tamb = 25 °C
006aab714
20
30
VR (V)
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
0.175
PR(AV)
(W)
0.15
0.125
0.10
0.075
0.05
0.025
0.0
0
(1)
(2)
(3)
5
10
15
Tj = 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
006aab716
(4)
20
25
VR (V)
Fig 7. Average reverse power dissipation as a
function of reverse voltage; typical values
0.15
PF(AV)
(W)
0.10
0.05
(2)
(1)
006aab715
(4)
(3)
0.0
0.0
0.1
0.2
0.3
IF(AV) (A)
Tj = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig 6.
Average forward power dissipation as a
function of average forward current; typical
values
0.3
(1)
IF(AV)
(A)
(2)
0.2
006aab717
(3)
0.1
(4)
0.0
0
25 50 75 100 125 150 175
Tamb (°C)
FR4 PCB, standard footprint
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 8. Average forward current as a function of
ambient temperature; typical values
RB521S30_1
Product data sheet
Rev. 01 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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