R6012ANJ 데이터 시트보기 (PDF) - ROHM Semiconductor
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R6012ANJ Datasheet PDF : 6 Pages
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R6012ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±100 nA VGS=±30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 600
−
−
V ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
−
−
100 µA VDS=600V, VGS=0V
Gate threshold voltage
VGS(th)
2.5
−
4.5
V VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on) ∗
−
0.32 0.42 Ω ID=6A, VGS=10V
Forward transfer admittance
| Yfs | ∗ 3.5
−
−
S ID=6A, VDS=10V
Input capacitance
Ciss
− 1300 −
pF VDS=25V
Output capacitance
Coss
−
890
−
pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
−
td(on) ∗
−
tr ∗ −
td(off) ∗
−
tf ∗ −
Qg ∗ −
Qgs ∗
−
Qgd ∗
−
45
−
30
−
30
−
90
−
35
−
35
−
7
−
15
−
pF f=1MHz
ns ID=6A, VDD 300V
ns VGS=10V
ns RL=50Ω
ns RG=10Ω
nC VDD 300V
ID=12A
nC VGS=10V
nC RL=25Ω / RG=10Ω
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗ Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗
−
− 1.5 V IS=12A, VGS=0V
Data Sheet
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○c 2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.04 - Rev.A
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