PBHV9115T 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBHV9115T Datasheet PDF : 13 Pages
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NXP Semiconductors
PBHV9115T
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
400
hFE
300
200
100
006aab166
(1)
(2)
(3)
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−1.2
VBE
(V)
−0.8
−0.4
006aab168
(1)
(2)
(3)
−2.0
IC
(A)
−1.6
−1.2
−0.8
IB (mA) = −400
−320
−240
−160
−80
006aab167
−360
−280
−200
−120
−40
−0.4
0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
−1.3
VBEsat
(V)
−0.9
−0.5
006aab169
(1)
(2)
(3)
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
−0.1
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −10 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV9115T_2
Product data sheet
Rev. 02 — 9 January 2009
© NXP B.V. 2009. All rights reserved.
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