PBHV9050T,215 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBHV9050T,215 Datasheet PDF : 12 Pages
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NXP Semiconductors
PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
240
hFE
180
120
60
006aab692
(1)
(2)
(3)
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−1.00
VBE
(V)
−0.75
006aab694
(1)
(2)
−0.50
(3)
−0.25
−0.5
IC
(A)
−0.4
IB (mA) = −200
−180
−160 −140
−120 −100
−0.3
−80
−60
−0.2
−40
−20
−0.1
006aab693
0.0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
−1.2
VBEsat
(V)
−0.9
−0.6
006aab695
(1)
(2)
(3)
−0.3
0.0
−10−1
−1
−10
−102
−103
IC (mA)
0.0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −10 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV9050T_1
Product data sheet
Rev. 01 — 16 September 2009
© NXP B.V. 2009. All rights reserved.
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