MUR2020CT 데이터 시트보기 (PDF) - Vishay Semiconductors
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MUR2020CT Datasheet PDF : 8 Pages
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www.vishay.com
VS-MUR2020CTPbF, VS-MUR2020CT-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
-
IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A
trr
TJ = 25 °C
-
-
-
21
TJ = 125 °C
-
35
TJ = 25 °C
IF = 10 A
-
1.9
IRRM
dIF/dt = 200 A/μs
TJ = 125 °C
VR = 160 V
-
4.8
TJ = 25 °C
Qrr
TJ = 125 °C
-
25
-
78
MAX.
35
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Thermal resistance,
junction to case
per leg
total device
RthJC
Thermal resistance,
junction to ambient per leg
RthJA
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style TO-220AB
MIN.
- 65
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
-
MAX.
175
2.5
1.25
50
UNITS
°C
°C/W
0.5
-
2.0
-
0.07
-
12
-
(10)
MUR2020CT
g
oz.
kgf · cm
(lbf · in)
Revision: 11-Aug-11
2
Document Number: 94079
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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