MMBD101 데이터 시트보기 (PDF) - TY Semiconductor
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MMBD101 Datasheet PDF : 1 Pages
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Product specification
MMBD101
Features
Low Noise Figure-6.0dB Typ@1.0GHz
Very Low Capacitance-Less Than 1.0pF@zero Volts
High Forward Conductance-0.5volts(typ)@IF=10mA
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute M axim um Ratings Ta = 25
Param eter
Reverse voltage
Forward Power Dissipation
@TA = 25
Derate above 25
Junction tem perature
Storage tem perature range
Sym bol
VR
pF
Tj
T stg
V a lu e
7.0
U n it
V
280
2.2
150
-55 to +150
mW
mW/
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Reverse Breakdown Voltage
Diode Capacitance
Forward Voltage
Reverse Leakage
Symbol
Conditions
Min
Typ
Max
Unit
V(BR)R
IR= 10 A
7.0
10
V
CT
VR= 0,f =1.0MHz,Note1
0.88
1.0
pF
VF
IF= 10 mA
0.5
0.6
V
IR
VR= 3.0 V
0.02
0.25
A
Marking
Marking
4M
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