MG100Q2YS65H 데이터 시트보기 (PDF) - Toshiba
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MG100Q2YS65H Datasheet PDF : 6 Pages
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MG100Q2YS65H
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Switching time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
Switching loss
Turn-on
Turn-off
IGES
VGE = ±20 V, VCE = 0
¾
¾ ±500 nA
ICES
VCE = 1200 V, VGE = 0
¾
¾
2.0 mA
VGE (off) IC = 100 mA, VCE = 5 V
4.0
¾
7.0
V
VCE (sat)
IC = 100 A,
VGE = 15 V
Tc = 25°C
¾
3.0
4.0
V
Tc = 125°C ¾
3.6
¾
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
¾ 8500 ¾
pF
td (on)
¾ 0.05 ¾
tr
ton
td (off)
Inductive load
VCC = 600 V, IC = 100 A
VGE = ±15 V, RG = 9.1 W
¾ 0.05 ¾
¾ 0.10 ¾
ms
¾ 0.55 ¾
tf
¾ 0.05 0.15
toff
¾ 0.60 ¾
VF
IF = 100 A, VGE = 0
¾
2.4
3.5
V
trr
IF = 100 A, VGE = -10 V,
di/dt = 700 A/ms
¾
0.1
¾
ms
Rth (j-c)
Transistor stage
Diode stage
¾
¾ 0.18
°C/W
¾
¾ 0.41
Eon
Inductive load
VCC = 600 V, IC = 100 A
Eoff
VGE = ±15 V, RG = 9.1 W
Tc = 125°C
¾
10
¾
mJ
¾
8
¾
Note: Switching time measurement circuit and input/output waveforms
RG
-VGE
IC
RG
IF
VCC
L
VCE
VGE
0
90%
IC
90%
0 td (off)
10%
tf
toff
10%
trr
90%
10%
td (on)
tr
ton
2
2002-10-04
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