MG75Q2YS40 데이터 시트보기 (PDF) - Toshiba
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MG75Q2YS40 Datasheet PDF : 6 Pages
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TOSHIBA GTR Module Silicon N Channel IGBT
MG75Q2YS40
High Power Switching Applications
Motor Control Applications
MG75Q2YS40
Unit: mm
l High input impedance
l High speed :
tf = 0.5µs (Max)
trr = 0.5µs (Max)
l Low saturation voltage++++++++++++
:
VCE(sat) = 4.0V (Max)
l Enhancement-mode
l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
Weight: 202g
―
―
2-94D1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
Unit
1200
V
±20
V
75
A
150
75
A
150
560
W
150
°C
−40 ~ 125
°C
2500
(AC 1 minute)
V
3/3
N·m
1
2001-04-20
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