MG150Q2YS40 데이터 시트보기 (PDF) - Toshiba
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MG150Q2YS40 Datasheet PDF : 6 Pages
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TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS40
MG150Q2YS40
High Power Switching applications
Motor Control Applications
Unit: mm
l High input impedance
l High speed : tf = 0.5µs (max)
trr = 0.5µs (max)
l Low saturation voltage
: VCE (sat) = 4.0V (max)
l Enhancement-mode
l Includes a complate half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
JEDEC
JEITA
TOSHIBA
Weight: 430g (typ.)
―
―
2-109C1A
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
Unit
1200
V
±20
V
150
A
300
150
A
300
1100
W
150
°C
−40 ~ 125
°C
2500
V
(AC 1 min.)
3/3
N·m
1
2001-08-16
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