MG150Q1JS40 데이터 시트보기 (PDF) - Toshiba
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MG150Q1JS40 Datasheet PDF : 6 Pages
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TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q1JS40
MG150Q1JS40
High Power Switching Applications
Chopper Applications
Unit: mm
High input impedance
High speed : tf = 0.5µs (Max)
trr = 0.5µs (Max)
Low saturation voltage
: VCE (sat) = 4.0V (Max)
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
Weight: 430g
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
Unit
1200
V
±20
V
150
A
300
150
A
300
1100
W
150
°C
−40 ~ 125
°C
2500
(AC 1 min.)
V
3/3
N·m
―
―
2-109C3A
1
2001-05-11
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