MG150J1BS11 데이터 시트보기 (PDF) - Toshiba
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MG150J1BS11 Datasheet PDF : 5 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
Symbol
IGES
ICES
VGE (off)
VCE (sat)
Cies
tr
ton
tf
toff
Rth (j-c)
Test Condition
VGE = ±20V, VCE = 0
VCE = 600V, VGE = 0
VCE = 5V, IC = 150mA
IC = 150A, VGE = 15V
VCE = 10V, VGE = 0, f = 1MHz
―
MG150J1BS11
Min Typ. Max Unit
―
― ±500 nA
―
―
1.0 mA
3.0
―
6.0
V
―
2.3
2.7
V
― 12000 ―
pF
―
0.3
0.8
―
0.4
1.0
µs
―
0.6
1.0
―
1.0
1.6
―
― 0.278 °C / W
2
2003-04-11
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