TOSHIBA GTR Module Silicon N Channel IGBT
MG100Q2YS40
High Power Switching applications
Motor Control Applications
MG100Q2YS40
Unit: mm
High input impedance
High speed : tf = 0.5µs (Max)
trr = 0.5µs (Max)
Low saturation voltage
: VCE (sat) = 4.0V (Max)
Enhancement-mode
Includes a complete half bridge in one package.
The electrodes are isolated from case.
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
Weight: 240g
―
―
2-108A2A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
Unit
1200
V
±20
V
100
A
200
100
A
200
670
W
150
°C
−40 ~ 125
°C
2500
(AC 1 min.)
V
3/3
N·m
1
2001-04-16